5秒后页面跳转
CZT3150LEADFREE PDF预览

CZT3150LEADFREE

更新时间: 2024-11-01 19:41:39
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 596K
描述
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4

CZT3150LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.26外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN (315)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

CZT3150LEADFREE 数据手册

 浏览型号CZT3150LEADFREE的Datasheet PDF文件第2页 
CZT3150  
www.centralsemi.com  
SURFACE MOUNT NPN  
SILICON POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3150 type is  
a NPN Silicon Power Transistor manufactured by the  
epitaxial planar process, epoxy molded in a surface  
mount package, designed for high current, high gain,  
fast switching applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
50  
25  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
7.0  
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
5.0  
A
C
I
1.0  
A
B
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
V
V
=50V  
1.0  
1.0  
µA  
µA  
V
CBO  
EBO  
CB  
EB  
=7.0V  
BV  
I =10mA  
25  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
V
V
V
V
I =3.0A, I =150mA  
0.5  
0.6  
V
C
B
I =4.0A, I =200mA  
V
C
B
I =3.0A, I =150mA  
1.10  
1.40  
550  
V
C
B
I =4.0A, I =200mA  
V
C
B
h
h
h
V
=2.0V, I =500mA  
250  
150  
50  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=2.0V, I =2.0A  
FE  
C
=2.0V, I =5.0A  
FE  
C
f
=6.0V, I =50mA, f=200MHz  
150  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
50  
ob  
E
R6 (1-March 2010)  

与CZT3150LEADFREE相关器件

型号 品牌 获取价格 描述 数据表
CZT3150PBFREE CENTRAL

获取价格

暂无描述
CZT3150TR CENTRAL

获取价格

暂无描述
CZT3150TR13 CENTRAL

获取价格

Transistor
CZT3150TRLEADFREE CENTRAL

获取价格

Transistor
CZT31C CENTRAL

获取价格

2.0W COMPLEMENTARY SILICON POWER TRANSISTOR
CZT31C CJ

获取价格

SOT-223
CZT31C BL Galaxy Electrical

获取价格

100V,3A,Medium Power NPN Bipolar Transistor
CZT31CBKLEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
CZT31CLEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
CZT31CTR CENTRAL

获取价格

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,