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CZT3120TR13 PDF预览

CZT3120TR13

更新时间: 2024-09-13 20:55:19
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 597K
描述
Transistor

CZT3120TR13 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):40最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):8 MHzBase Number Matches:1

CZT3120TR13 数据手册

 浏览型号CZT3120TR13的Datasheet PDF文件第2页 
CZT3120  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON SWITCHING  
POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3120 NPN  
Switching Power Transistor, manufactured by the  
epitaxial planar process, combines both power and  
high speed switching characteristics in a SOT-223  
Surface Mount Package. Typical applications include  
drivers, DC-DC converters, and general fast switching  
applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
120  
70  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
7.0  
V
Continuous Collector Current  
Power Dissipation  
I
3.0  
A
C
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
°C  
°C/W  
J, stg  
Θ
JA  
62.5  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
µA  
µA  
V
I
I
V
V
=80V  
1.0  
1.0  
CBO  
EBO  
CB  
EB  
=5.0V  
BV  
BV  
BV  
I =50µA  
120  
70  
160  
90  
CBO  
CEO  
EBO  
CE(SAT)  
BE(ON)  
FE  
C
I =10mA  
V
C
I =50µA  
7.0  
15  
V
E
V
V
I =2.0A, I =200mA  
250  
0.95  
170  
165  
75  
500  
1.1  
mV  
V
C
B
I =2.0A, V =1.0V  
C
CE  
h
h
h
V
=5.0V, I =10mA  
100  
100  
40  
CE  
CE  
CE  
CE  
C
V
V
V
=5.0V, I =500mA  
300  
FE  
C
=5.0V, I =3.0A  
FE  
C
f
=10V, I =500mA, f=1.0MHz  
8.0  
MHz  
T
C
R3 (1-March 2010)  

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