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CZT3150BK PDF预览

CZT3150BK

更新时间: 2024-11-01 19:41:39
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 596K
描述
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4

CZT3150BK 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.26外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

CZT3150BK 数据手册

 浏览型号CZT3150BK的Datasheet PDF文件第2页 
CZT3150  
www.centralsemi.com  
SURFACE MOUNT NPN  
SILICON POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3150 type is  
a NPN Silicon Power Transistor manufactured by the  
epitaxial planar process, epoxy molded in a surface  
mount package, designed for high current, high gain,  
fast switching applications.  
MARKING: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Collector-Base Voltage  
V
V
V
50  
25  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
7.0  
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
5.0  
A
C
I
1.0  
A
B
P
2.0  
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
°C/W  
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
V
V
=50V  
1.0  
1.0  
µA  
µA  
V
CBO  
EBO  
CB  
EB  
=7.0V  
BV  
I =10mA  
25  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
V
V
V
V
I =3.0A, I =150mA  
0.5  
0.6  
V
C
B
I =4.0A, I =200mA  
V
C
B
I =3.0A, I =150mA  
1.10  
1.40  
550  
V
C
B
I =4.0A, I =200mA  
V
C
B
h
h
h
V
=2.0V, I =500mA  
250  
150  
50  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=2.0V, I =2.0A  
FE  
C
=2.0V, I =5.0A  
FE  
C
f
=6.0V, I =50mA, f=200MHz  
150  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
50  
ob  
E
R6 (1-March 2010)  

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