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CZT3090L PDF预览

CZT3090L

更新时间: 2024-11-01 03:27:51
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 76K
描述
SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR

CZT3090L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-223
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.78
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):175JESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

CZT3090L 数据手册

 浏览型号CZT3090L的Datasheet PDF文件第2页 
TM  
CZT3090L  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
LOW V  
CE(SAT)  
NPN SILICON POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT3090L is  
a Low V  
NPN Transistor in a space  
CE(SAT)  
saving Power SOT-223 surface mount package,  
designed for DC-DC converters for mobile  
systems and LAN cards, motor control, power  
management and strobe flash units.  
MARKING CODE: FULL PART NUMBER  
SOT-223 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
V
V
V
45  
15  
6.0  
3.0  
6.0  
2.0  
V
V
V
A
A
W
CBO  
CEO  
EBO  
I
C
I
CM  
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
62.5  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
100  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
mV  
I
I
V
V
=20V  
=5.0V  
CBO  
EBO  
CB  
EB  
BV  
BV  
BV  
I =10µA  
45  
15  
6.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =10µA  
E
V
V
V
V
I =100mA, I =1.0mA  
30  
60  
85  
50  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
FE  
C
B
I =1.0A, I =20mA  
150  
200  
300  
C
B
B
B
I =2.0A, I =200mA  
C
I =3.0A, I =60mA  
145  
C
h
h
h
V
=2.0V, I =500mA  
200  
200  
175  
CE  
CE  
CE  
CB  
CE  
C
V
V
V
V
=2.0V, I =1.0A  
C
FE  
FE  
=2.0V, I =3.0A  
C
C
=10V, f=1.0MHz  
100  
pF  
MHz  
ob  
f
=10V, I =500mA  
100  
T
C
R2 (17-June 2004)  

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