Datasheet > CRTK052N02S2-G

CRTK052N02S2-G

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
11页	872K
描述
PDFN3.3×3.3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CRTK052N02S2-G 数据手册

Silicon N-Channel Power MOSFET

CRTK052N02S2-G

V_DSS

3.1

General Description：

I_D

（

）

Silicon limited current

CRTK052N02S2-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is PDFN3.3*3.3, which accords with the RoHS

standard.

（

）

Package limited current

mΩ

R_DS(ON)Typ

Features：

 Fast Switching



Low ON Resistance(Rdson≤4.2 mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C _（

）

Silicon limited

I_D

Continuous Drain Current T_C= 25 °C _（

Continuous Drain Current T_C= 100 °C

）

Package limited

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

200

±10

121

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

0.23

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2021V01

12 3 4 5 6 7...11

中文翻译

下载PDF

与CRTK052N02S2-G相关器件

型号	品牌	获取价格	描述	数据表
CRTK055N03L	CRMICRO	获取价格	DFN3×3
CRTK060P02S2P	CRMICRO	获取价格	PDFN3.3×3.3
CRTK080P02U2-G	CRMICRO	获取价格	PDFN3.3×3.3
CRTK080P03L2P	CRMICRO	获取价格	PDFN3.3×3.3
CRTK120P03L2-G	CRMICRO	获取价格	PDFN3.3×3.3
CRTK140NE4LP	CRMICRO	获取价格	PDFN3.3×3.3
CRTK140P03L	CRMICRO	获取价格	PDFN3.3×3.3
CRTK140P03LZ	CRMICRO	获取价格	DFN3×3
CRTK210P03L2-G	CRMICRO	获取价格	PDFN3.3×3.3
CRTK380N04N	CRMICRO	获取价格	DFN3×3