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CRTM063N04L PDF预览

CRTM063N04L

更新时间: 2024-11-18 15:19:39
品牌 Logo 应用领域
华润微 - CRMICRO 光电二极管
页数 文件大小 规格书
9页 526K
描述
PDFN5×6

CRTM063N04L 数据手册

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CRTM063N04L  
Trench N-MOSFET 40V, 4.5mΩ, 72A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
40V  
• Uses CRM(CQ) advanced Trench MOS technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
• Qualified according to JEDEC criteria  
RDS(on) typ.  
ID  
4.5mΩ  
72A  
100% DVDS Tested  
Applications  
100% Avalanche Tested  
• Motor control and drive  
• Battery management  
• UPS (Uninterrupible Power Supplies)  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
DFN5X6  
Reel Size  
N/A  
Tape Width  
N/A  
Qty  
Packing  
Reel  
CRTM063N04L  
TM063N04L  
5000pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
40  
V
Continuous drain current  
TC = 25°C (Silicon limit)  
TC = 25°C (Package limit)  
TC = 100°C (Silicon limit)  
72  
124  
46  
ID  
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
)
ID pulse  
EAS  
288  
75  
A
mJ  
V
Avalanche energy, single pulse (L=0.5mH, Rg=25)  
Gate-Source voltage  
VGS  
±20  
Power dissipation (TC = 25°C)  
Ptot  
59  
W
°C  
Tj , T stg  
Operating junction and storage temperature  
-55...+150  
Soldering temperature, wave soldering only allowed at leads  
(1.6mm from case for 10s)  
Tsold  
260  
°C  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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