Datasheet > CRTK700N10S-G

CRTK700N10S-G

更新时间： 2024-11-24 15:19:51

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	811K
描述
PDFN3.3×3.3

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数据手册

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CRTK700N10S-G 数据手册

Silicon N-Channel Power MOSFET

CRTK700N10S-G

General Description：

V_DSS

I_D

100

CRTK700N10S-G the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

PDFN3.3*3.3, which accords with the Halogen Free standard.

Features：

P_D

22.7

R_DS(ON)

mΩ

 Fast Switching

 Low ON Resistance (Rdson≤70mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

100

Continuous Drain Current T_c= 25 °C

Continuous Drain Current T_c= 100 °C

Pulsed Drain Current T_c= 25 °C

Gate-to-Source Voltage

I_D

8.4

I_DM

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation T_c= 25 °C

E_AS

22.7

0.182

P_D

Derating Factor above 25°C

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO ., LTD. Page 1 of 10

2022V01

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