Datasheet > CRTM045N03L2P

CRTM045N03L2P

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	864K
描述
PDFN5×6

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CRTM045N03L2P 数据手册

Silicon N-Channel Power MOSFET

CRTM045N03L2P

General Description：

V_DSS

3.4

CRTM045N03L2P the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is PDFN5*6, which accords with the RoHS standard.

Features：

I_D

（

）

Silicon limited current

I_D

（

）

Package limited current

mΩ

R_DS(ON)Typ

 Fast Switching



Low ON Resistance(Rdson≤4.5mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

E-cigarette,Electric Tool

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C _（

）

Silicon limited

I_D

）

Package limited

53.2

240

±20

162.5

Continuous Drain Current T_C= 100 °C _（

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

）

Package limited

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

0.42

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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