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CRTM055N03LE PDF预览

CRTM055N03LE

更新时间: 2024-10-29 17:01:55
品牌 Logo 应用领域
华润微 - CRMICRO 光电二极管
页数 文件大小 规格书
10页 582K
描述
PDFN5×6

CRTM055N03LE 数据手册

 浏览型号CRTM055N03LE的Datasheet PDF文件第2页浏览型号CRTM055N03LE的Datasheet PDF文件第3页浏览型号CRTM055N03LE的Datasheet PDF文件第4页浏览型号CRTM055N03LE的Datasheet PDF文件第5页浏览型号CRTM055N03LE的Datasheet PDF文件第6页浏览型号CRTM055N03LE的Datasheet PDF文件第7页 
CRTM055N03LE  
Trench N-MOSFET 30V, 4mΩ, 54A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
30V  
4mΩ  
54A  
• Uses CRM(CQ) advanced Trench MOS technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
• Qualified according to JEDEC criteria  
RDS(on) typ.  
ID  
100% DVDS Tested  
Applications  
100% Avalanche Tested  
• Motor control and drive  
• Battery management  
• UPS (Uninterrupible Power Supplies)  
ESD Protected  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
DFN5X6  
Reel Size  
Tape Width  
N/A  
Qty  
Packing  
Reel  
CRTM055N03LE  
TM055N03LE  
N/A  
5000pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
30  
V
Continuous drain current  
TC = 25°C (Silicon limit)  
TC = 25°C (Package limit)  
TC = 100°C (Silicon limit)  
64  
54  
41  
ID  
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
)
ID pulse  
EAS  
216  
38  
A
mJ  
V
Avalanche energy, single pulse (L=0.5mH, Rg=25)  
Gate-Source voltage  
VGS  
±20  
ESD  
HBM  
Ptot  
2.5  
KV  
W
Power dissipation (TC = 25°C)  
Operating junction and storage temperature  
39  
Tj , T stg  
-55...+150  
°C  
Soldering temperature, wave soldering only allowed at leads  
(1.6mm from case for 10s)  
Tsold  
260  
°C  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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