Datasheet > CRTM105N06L

CRTM105N06L

更新时间： 2024-04-09 19:01:26

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
9页	515K
描述
PDFN5×6

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数据手册

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CRTM105N06L 数据手册

CRTM105N06L

Trench N-MOSFET 60V, 8mΩ, 56A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

60V

8mΩ

56A

• Uses CRM(CQ) advanced Trench MOS technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

Package Marking and Ordering Information

Part #

Marking

Package

DFN5X6

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Reel

CRTM105N06L

TM105N06L

5000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

124

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

224

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

©China Resources Microelectronics (Chongqing) Limited

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