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CRTS048N08N PDF预览

CRTS048N08N

更新时间: 2024-11-19 15:19:31
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 515K
描述
TO-263(或D2PAK)

CRTS048N08N 数据手册

 浏览型号CRTS048N08N的Datasheet PDF文件第2页浏览型号CRTS048N08N的Datasheet PDF文件第3页浏览型号CRTS048N08N的Datasheet PDF文件第4页浏览型号CRTS048N08N的Datasheet PDF文件第5页浏览型号CRTS048N08N的Datasheet PDF文件第6页浏览型号CRTS048N08N的Datasheet PDF文件第7页 
CRTS048N08N  
Trench N-MOSFET 80V, 3.3mΩ, 160A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
80V  
• Uses CRM(CQ) advanced Trench technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
• Qualified according to JEDEC criteria  
RDS(on) typ.  
ID  
3.3mΩ  
160A  
100% DVDS Tested  
Applications  
100% Avalanche Tested  
• Motor control and drive  
• Battery management  
• UPS (Uninterrupible Power Supplies)  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
TO-263  
Reel Size  
Tape Width  
N/A  
Qty  
Packing  
Reel  
CRTS048N08N  
N/A  
1000pcs  
CRTS048N08N  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
80  
V
Continuous drain current  
TC = 25°C (Silicon limit)  
TC = 25°C (Package limit)  
TC = 100°C (Silicon limit)  
184  
160  
117  
ID  
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
)
ID pulse  
EAS  
640  
380  
A
mJ  
V
Avalanche energy, single pulse (L=0.5mH, Rg=25)  
Gate-Source voltage  
VGS  
±25  
Power dissipation (TC = 25°C)  
Ptot  
280  
W
°C  
Tj , T stg  
Operating junction and storage temperature  
-55...+150  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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