Datasheet > CRTQ240N20NZ

CRTQ240N20NZ

更新时间： 2024-11-21 15:19:11

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1536K
描述
TO-247

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中文翻译

获取价格

数据手册

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CRTQ240N20NZ 数据手册

CRTQ240N20NZ

Trench N-MOSFET 200V, 20mΩ, 66A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

200V

20mΩ

66A

• Uses CRM(CQ) advanced Trench MOS technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

100% Avalanche Tested

100% DVDS Tested

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRTQ240N20NZ

Package Marking and Ordering Information

MARKING

Marking

Package

TO-247

Packing

Tube

Reel Size

N/A

Tape Width

N/A

Qty

CRTQ240N20NZ

25pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

200

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

160

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=1mH, Rg=25Ω)

Gate-Source voltage

)

I_{D pulse}

E_AS

264

326

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

260

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev2.0

©China Resources Microelectronics (Chongqing) Limited

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