Datasheet > CRTM900P10LQ

CRTM900P10LQ

更新时间： 2024-11-19 17:01:23

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
9页	1353K
描述
PDFN5×6

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中文翻译

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数据手册

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CRTM900P10LQ 数据手册

CRTM900P10LQ

Trench P-MOSFET -100V, 74mΩ, -17A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

-100V

74mΩ

-17A

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• AEC-Q101 Qualified

R_{DS(on)@10V typ}

I_D

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRTM900P10LQ

Package Marking and Ordering Information

Part #

Marking

Package

DFN5*6

Reel Size

Tape Width

N/A

Qty

Packing

CRTM900P10LQ

900P10LQ

Tape&reel

N/A

4000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

-100

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

-17

-30

-12

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

-68

225

Avalanche energy, single pulse (ID=-30A, Rg=25Ω)^[1]

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+175

Soldering temperature, wave soldering only allowed at leads (1.6mm

from case for 10s)

Tsold

260

°C

Notes:1.EAS was tested at Tj = 25℃, L = 0.5mH, IAS = -30A, Vgs=-10V.

Thermal Resistance

Parameter

Symbol

Max

Unit

R_thJC

R_thJA

Thermal resistance, junction – case (junction-heat-spreader)

2.9

°C/W

Thermal resistance, junction – ambient(min. footprint)

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

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