Datasheet > CRTM052N02S2-G

CRTM052N02S2-G

更新时间： 2024-11-19 17:01:59

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	1081K
描述
PDFN5×6

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中文翻译

获取价格

数据手册

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CRTM052N02S2-G 数据手册

CRTM052N02S2-G

Trench N-MOSFET 20V, 3.1mΩ, 80A

Features

Product Summary

V_DS

20V

• Uses CRM advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

3.1mΩ

80A

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Electrical tools

• Lithium battery protection

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRTM052N02S2-G

T052N02S2

PDFN5×6

N/A

5000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C （Silicon limited）

T_C= 25°C （Package limited）

T_C= 100°C （Package limited）

I_D

53.6

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH)

Gate-Source voltage

)

I_{D pulse}

E_AS

240

132

V_GS

±10

Power dissipation (T_C= 25°C)

P_tot

35.7

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Ver. 1.0

©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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