Datasheet > CRTM063N04LZ

CRTM063N04LZ

更新时间： 2024-03-03 10:06:27

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	1446K
描述
PDFN5×6

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中文翻译

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数据手册

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CRTM063N04LZ 数据手册

CRTM063N04LZ

华润微电子(重庆)有限公司

Trench N-MOSFET 40V, 4.5mΩ, 82A

Features

Product Summary

V_DS

40V

• Uses CRM(CQ) advanced Trench MOS technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

• AEC-Q101 Qualified

R_DS(on).typ

I_D

4.5mΩ

82A

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRTM063N04LZ

Package Marking and Ordering Information

Part #

Marking

Package

DFN5X6

Packing

Reel

Reel Size Tape Width

Qty

CRTM063N04LZ

TM063N04LZ

N/A

5000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 100°C (Silicon limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 33A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

328

269

V_GS

Gate-Source voltage

±20

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+175

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =33A, VGS = 10V.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

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