Datasheet > CRTM058N04L2-G

CRTM058N04L2-G

更新时间： 2024-11-19 15:18:51

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	842K
描述
PDFN5×6

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数据手册

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CRTM058N04L2-G 数据手册

Silicon N-Channel Power MOSFET

CRTM058N04L2-G

V_DSS

General Description：

I_D

（

）

Silicon limited current

CRTM058N04L2-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is PDFN5×6, which accords with the RoHS standard.

Features：

（

）

Package limited current

46.2

4.9

mΩ

R_DS(ON)Typ

 Fast Switching



Low ON Resistance(Rdson≤5.8 mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C _（

）

Silicon limited

I_D

Continuous Drain Current T_C= 25 °C _（

Continuous Drain Current T_C= 100 °C

）

Package limited

42.5

200

±20

141.6

46.2

0.37

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2022V01

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