Silicon N-Channel Power MOSFET
CRTM058N04L2-G
VDSS
40
60
V
A
General Description:
ID
ID
(
)
Silicon limited current
CRTM058N04L2-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is PDFN5×6, which accords with the RoHS standard.
Features:
50
A
(
)
Package limited current
PD
46.2
4.9
W
mΩ
RDS(ON)Typ
Fast Switching
Low ON Resistance(Rdson≤5.8 mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tj= 25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
Continuous Drain Current TC = 25 °C (
40
60
V
A
)
Silicon limited
a1
ID
50
A
Continuous Drain Current TC = 25 °C (
Continuous Drain Current TC = 100 °C
)
Package limited
42.5
200
±20
141.6
46.2
0.37
A
a1
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
A
IDM
VGS
V
a2
Avalanche Energy
mJ
W
EAS
Power Dissipation TC = 25 °C
Derating Factor above 25°C
PD
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
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2022V01