Datasheet > CRTM045N03L2P

CRTM045N03L2P

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	864K
描述
PDFN5×6

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数据手册

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CRTM045N03L2P 数据手册

CRTM045N03L2P

100

PULSED TEST

V_DS=5V

PULSED TEST

V_GS=0V

Tj=150℃

Tj=25℃

0.1

0.01

0.1

0.2

0.4

0.6

0.8

1.2

V_GS,Gate-to-Source Voltage[V]

V_SD，Source-to-Drain Voltage[V]

Figure 7 Typical Body Diode Transfer

Characteristics

Figure 6 Typical Transfer Characteristics

7.5

PULSED TEST

T_j= 25℃

PULSED TEST

I_D= 19A

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.8

1.6

1.4

1.2

V_GS= 4.5V

V_GS= 10V

V_GS= 4.5V

V_GS= 10V

0.8

0.6

0.4

-50 -25

100 125 150

I_D,Drain Current,A

T_J,Junction Temperature(℃)

Figure 8. Drain-to-Source On Resistance vs

Drain Current

Figure 9. Normalized On Resistance vs

Junction Temperature

1.3

1.11.2

V_GS= V_DS

I_D= 250μA

1.08

1.15

1.06

1.2

1.1

1.04

1.1

1.02

0.9

0.8

0.7

0.6

0.5

0.4

11.05

0.98

0.96

0.94

0.95

0.92

0.90.9

-5-0100 -25 -50 0

025

5500

75100 100150125 210500

-50 -25

100 125 150

T_J,Junction Temperature(℃)

Figure10. Normalized Threshold Voltage vs

Junction Temperature

Figure 11. Normalized Breakdown Voltage vs

Junction Temperature

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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2020V01

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