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CRTM035N04L2-G PDF预览

CRTM035N04L2-G

更新时间: 2024-11-21 15:19:11
品牌 Logo 应用领域
华润微 - CRMICRO 光电二极管
页数 文件大小 规格书
10页 839K
描述
PDFN5×6

CRTM035N04L2-G 数据手册

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Silicon N-Channel Power MOSFET  
CRTM035N04L2-G  
VDSS  
40  
130  
60  
V
A
General Description  
ID  
ID  
Silicon limited current  
CRTM035N04L2-G, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device can  
be used in load switch and power switch applications. The package  
form is PDFN5*6, which accords with the RoHS standard.  
Features  
A
Package limited current  
PD  
104.1  
2.7  
W
mΩ  
RDS(ON)Typ  
Fast Switching  
Low ON Resistance(Rdson≤3.4m)  
Low Gate Charge  
Low Reverse transfer capacitances  
100% Single Pulse avalanche energy Test  
Halogen Free  
Applications:  
load switch and power switch applications.  
AbsoluteTj= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
40  
130  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 25 °C (  
ID  
60  
A
Package limited  
60  
Continuous Drain Current TC = 100 °C (  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
A
Package limited  
a1  
240  
A
IDM  
VGS  
V
±20  
282.2  
104.1  
0.83  
a2  
Avalanche Energy  
mJ  
W
EAS  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
PD  
W/℃  
Operating Junction and Storage Temperature Range  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2021V01