Datasheet > CRTM021N04L2-G

CRTM021N04L2-G

更新时间： 2024-11-20 17:01:55

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	780K
描述
PDFN5×6

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CRTM021N04L2-G 数据手册

Silicon N-Channel Power MOSFET

CRTM021N04L2-G

V_DSS

230

General Description：

I_D

（

）

Silicon limited current

CRTM021N04L2-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device can

be used in load switch and power switch applications. The package

form is PDFN5*6, which accords with the RoHS standard.

Features：

（

）

Package limited current

178.5

1.65

mΩ

R_DS(ON)Typ

 Fast Switching



Low ON Resistance(Rdson≤2.1mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

load switch and power switch applications.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

230

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 25 °C _（

I_D

）

Package limited

Continuous Drain Current T_C= 100 °C _（

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

）

Package limited

240

±20

630

178.5

1.4

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2021V01

12 3 4 5 6 7...10

中文翻译

下载PDF

与CRTM021N04L2-G相关器件

型号	品牌	获取价格	描述	数据表
CRTM024N03L2-G	CRMICRO	获取价格	PDFN5×6
CRTM025N03L	CRMICRO	获取价格	PDFN5×6
CRTM025N04L2-G	CRMICRO	获取价格	PDFN5×6
CRTM028N03L2P	CRMICRO	获取价格	PDFN5×6
CRTM030N04L	CRMICRO	获取价格	PDFN5×6
CRTM035N04L2-G	CRMICRO	获取价格	PDFN5×6
CRTM045N03L2P	CRMICRO	获取价格	PDFN5×6
CRTM045N04L2P	CRMICRO	获取价格	PDFN5×6
CRTM052N02S2-G	CRMICRO	获取价格	PDFN5×6
CRTM055N03LE	CRMICRO	获取价格	PDFN5×6