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CRTM025N04L2-G PDF预览

CRTM025N04L2-G

更新时间: 2024-11-24 15:19:35
品牌 Logo 应用领域
华润微 - CRMICRO 光电二极管
页数 文件大小 规格书
10页 1261K
描述
PDFN5×6

CRTM025N04L2-G 数据手册

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Silicon N-Channel Power MOSFET  
CRTM025N04L2-G  
VDSS  
40  
150  
80  
V
A
General Description  
ID  
ID  
Silicon limited current  
CRTM025N04L2-G, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications. The  
package form is PDFN5*6, which accords with the RoHS standard.  
Features  
A
Package limited current  
PD  
104.1  
2.0  
W
mΩ  
RDS(ON)Typ  
Fast Switching  
Low ON Resistance(Rdson≤2.5 m)  
Low Gate Charge  
Low Reverse transfer capacitances  
100% Single Pulse avalanche energy Test  
Halogen Free  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTj= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
40  
150  
80  
V
A
Continuous Drain Current TC = 25 °C (  
Continuous Drain Current TC = 25 °C (  
Silicon limited  
a1  
ID  
A
Package limited  
a1  
80  
A
Continuous Drain Current TC = 100 °C (  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
Package limited  
a1  
320  
±20  
383.7  
104.1  
0.83  
A
IDM  
VGS  
V
a2  
Avalanche Energy  
mJ  
W
EAS  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
PD  
W/℃  
Operating Junction and Storage Temperature Range  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2021V01