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CRTK210P03L2-G PDF预览

CRTK210P03L2-G

更新时间: 2024-04-24 09:03:48
品牌 Logo 应用领域
华润微 - CRMICRO 光电二极管
页数 文件大小 规格书
10页 996K
描述
PDFN3.3×3.3

CRTK210P03L2-G 数据手册

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CRTK210P03L2-G  
Trench P-MOSFET -30V, 15mΩ, -26A  
Features  
Product Summary  
VDS  
-30V  
15mΩ  
-26A  
• Uses CRM advanced Trench technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
• Qualified according to JEDEC criteria  
RDS(on) typ.  
ID  
100% DVDS Tested  
Applications  
100% Avalanche Tested  
• Motor control and drive  
• Electrical tools  
• Lithium battery protection  
Package Marking and Ordering Information  
Part #  
Marking  
210P03L  
Package  
Reel Size  
Tape Width  
N/A  
Qty  
Packing  
Reel  
CRTK210P03L2-G  
PDFN3.3×3.3  
N/A  
5000pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
Continuous drain current  
-30  
V
ID  
A
TC = 25°C  
-26  
TC = 100°C  
-17.0  
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
Avalanche energy, single pulse (L=0.5mH)  
Gate-Source voltage  
)
ID pulse  
EAS  
-104  
54  
A
mJ  
V
VGS  
±18  
Power dissipation (TC = 25°C)  
Ptot  
17.3  
W
°C  
Tj , T stg  
Operating junction and storage temperature  
-55...+150  
Soldering temperature, wave soldering only allowed at leads  
(1.6mm from case for 10s)  
Tsold  
260  
°C  
Ver. 1.0  
©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
Page 1  

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