Datasheet > CRTK210P03L2-G

CRTK210P03L2-G

更新时间： 2024-11-20 15:19:07

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	996K
描述
PDFN3.3×3.3

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中文翻译

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数据手册

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CRTK210P03L2-G 数据手册

CRTK210P03L2-G

Trench P-MOSFET -30V, 15mΩ, -26A

Features

Product Summary

V_DS

-30V

15mΩ

-26A

• Uses CRM advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Electrical tools

• Lithium battery protection

Package Marking and Ordering Information

Part #

Marking

210P03L

Package

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRTK210P03L2-G

PDFN3.3×3.3

N/A

5000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

-30

I_D

TC = 25°C

-26

T_C= 100°C

-17.0

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH)

Gate-Source voltage

)

I_{D pulse}

E_AS

-104

V_GS

±18

Power dissipation (T_C= 25°C)

P_tot

17.3

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Ver. 1.0

©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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