Datasheet > CRTK055N03L

CRTK055N03L

更新时间： 2024-04-09 19:02:02

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1518K
描述
DFN3×3

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数据手册

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CRTK055N03L 数据手册

CRTK055N03L

Trench N-MOSFET 30V, 4.2mΩ, 64A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

30V

4.2mΩ

64A

• Uses CRM(CQ) advanced SkyMOS4 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

Applications

R_{DS(on)@10V typ}

I_D

100% Avalanche Tested

100% DVDS Tested

• Synchronous Rectification for AC/DC Quick Charger

• Battery management

• UPS (Uninterrupible Power Supplies)

DFN3.3*3.3

Package Marking and Ordering Information

Part #

Marking

05503

Package

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRTK055N03L

DFN3.3*3.3

N/A

5000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

I_D

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

256

Avalanche energy, single pulse (I_D=0.3mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...10

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