Datasheet > CRTK080P02U2-G

CRTK080P02U2-G

更新时间： 2024-10-15 15:19:27

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	983K
描述
PDFN3.3×3.3

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中文翻译

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数据手册

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CRTK080P02U2-G 数据手册

CRTK080P02U2-G

Trench P-MOSFET -20V, 6.6mΩ, -60A

Features

Product Summary

V_DS

-20V

• Uses CRM advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

6.6mΩ

-60A

100% DVDS Tested

Applications

100% Avalanche Tested

• portable electronics

• Electrical tools

• Lithium battery protection

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRTK080P02U2-G

T080P02U2

PDFN3.3*3.3

N/A

5000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

-20

I_D

TC = 25°C

-60

T_C= 100°C

-38.9

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH)

Gate-Source voltage

)

I_{D pulse}

E_AS

-240

V_GS

±10

Power dissipation (T_C= 25°C)

P_tot

35.7

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Ver. 1.0

©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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