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CPDQ12V0U-HF PDF预览

CPDQ12V0U-HF

更新时间: 2024-11-05 12:51:23
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
5页 87K
描述
SMD ESD Protection Diode

CPDQ12V0U-HF 数据手册

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SMD ESD Protection Diode  
CPDQ12V0U-HF  
RoHS Device  
Halogen Free  
Features  
0402/SOD-923F  
- IEC61000-4-2 Level 4 ESD protection.  
- ESD Rating of Class 3(>16kV) per Human Body Mode.  
- Low body height: 0.017”(0.43mm)  
- Low Leakage  
0.041(1.05)  
0.037(0.95)  
0.033(0.85)  
0.030(0.75)  
Mechanical data  
0.010(0.25)  
0.006(0.15)  
- Epoxy: Meets UL 94V-0  
0.026(0.65)  
- Case: 0402/SOD-923F small outline plastic package.  
molded plastic.  
- Terminals: Matte tin plated, solderable per  
MIL-STD-202,method 208.  
0.022(0.55)  
0.007(0.17)  
0.003(0.07)  
0.006(0.15)  
0.002(0.05)  
- Mounting position: Any.  
- High temperature soldering guaranteed:  
260°C/10 second.  
0.016(0.40)  
0.013(0.34)  
Dimensions in inches and (millimeter)  
- Weight: 0.001mgram(approx.).  
Circuit Diagram  
Maximum Rating and Electrical Characteristics  
O
(at TA=25 C unless otherwise specified. VF=0.9V Max. @ IF=10mA for all types)  
Symbol  
Typ  
Max Unit  
Parameter  
Working Peak Reverse Voltage  
Breakdown voltage  
Conditions  
Min  
VRWM  
VBR  
IR  
12  
V
IR = 1mA  
13.5  
V
Maximum reverse leakage current  
Junction capacitance  
µA  
pF  
VR = 12V  
1.0  
VR =0V,f =1MHz  
CT  
ESD  
ESD  
Vc  
30  
kV  
kV  
V
IEC 61000-4-2(air)  
15  
8
ESD capability  
IEC 61000-4-2(Contact)  
IPP = 5.9 A, tp=8/20us  
Clamping Voltage  
Peak Pulse Power  
Junction temperature  
23.7  
TP=8/20us  
PPP  
Tj  
140  
W
-55  
-55  
150  
150  
°C  
°C  
Storage temperature  
TSTG  
NOTES:  
1. FR-5=1.0*0.75*0.62 in.  
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.  
3. Surge current waveform per Figure3.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV: A  
Page 1  
QW-JP032  
Comchip Technology CO., LTD.  

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