Datasheet > CPDQC5V0HE-HF

CPDQC5V0HE-HF

更新时间： 2024-11-07 01:24:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	106K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQC5V0HE-HF 数据手册

SMD ESD Protection Diode

CPDQC5V0HE-HF

RoHS Device

Halogen Free

Features

- Bi-directional ESD protection

- IEC 61000-4-5 (surge) ; IPP=8A

- IEC 61000-4-2 (ESD) ; ±30KV(contact)

- Low clamping voltage

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

- Low leakage current

- High surge current

Mechanical data

0.022(0.55)

0.018(0.45)

- Case: 0402C/SOD-923F Standard package,

molded plastic.

0.012(0.30)

0.008(0.20)

0.001(0.02)

Max.

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.001 grams(approx.).

0.022(0.55)

0.018(0.45)

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Value

128

Unit

Peak pulse power

TP = 8/20us

PPP

IPP

Peak pulse current

IEC 61000-4-2(air)

ESD

±30

ESD capability

IEC 61000-4-2(contact)

±30

Operation temperature range

Storage temperature range

-40~+125

-55~+150

°C

TSTG

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Working peak reverse voltage

Diode breakdown voltage

Reverse current

Conditions

Min

Max

Unit

VRWM

VBR

IT = 1mA

5.5

7.0

0.1

VRWM = 5V

1.0

IPP = 1A, TP = 8/20us

IPP = 8A, TP = 8/20us

VR = 0V, f = 1MHz

Clamping voltage

Junction capacitance

Company reserves the right to improve product design , functions and reliability without notice.

REV:C

Page 1

QW-G7070

Comchip Technology CO., LTD.

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中文翻译

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