Datasheet > CPDQR5V0SP-HF_15

CPDQR5V0SP-HF_15

更新时间： 2024-11-19 00:29:43

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上华 - COMCHIP		/
页数	文件大小	规格书
4页	77K
描述
Low Capacitance ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQR5V0SP-HF_15 数据手册

Low Capacitance ESD Protection Diode

Comchip

S M D D i o d e S p e c i a l i s t

CPDQR5V0SP-HF

RoHS Device

Halogen Free

Features

- IEC61000-4-2 (ESD) ±8kV (Contact) , ±15kV(Air).

0402/SOD-923F

0.041(1.05)

0.037(0.95)

- IEC61000-4-4 (FET) rating. 40A( 5/50uS)

- IEC61000-4-5 (Lightning) rating. 24A( 8/20uS)

- Protects one bi-directional I/O line

- Working Voltage: 5V

0.026(0.65)

0.022(0.55)

- Typical capacitance: 0.3pF

Mechanical data

0.020(0.50)

0.016(0.40)

- Case: 0402/SOD-923F small outline plastic package.

molded plastic.

0.012(0.30)

0.008(0.20)

- Terminals: Matte tin plated, solderable per

MIL-STD-202,method 208.

- Mounting position: Any.

- High temperature soldering guaranteed:

260°C/10 second.

- Weight: 0.001 gram(approx.).

0.022(0.55)

0.018(0.45)

Dimensions in inches and (millimeter)

Circuit diagram

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Peak pulse current ( tp = 8/20µs waveform)

PPP

120

ESD per IEC 61000-4-2(Air)

ESD per IEC 61000-4-2(Contact)

±17

±12

VESD

Junction temperature rang

Storage temperature rang

-55 to +150

°C

TSTG

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

VRWM

Typ

Parameter

Conditions

Min

Max Unit

Reverse stand-Off voltage

Reverse leakage current

VR = 5 V

IR = 1 mA

IPP= 1 A

IPP= 2 A

Reverse breakdown voltage

V(BR)

0.5

Clamping voltage

Junction capacitance

VR= 0V , F=1MHz

REV: A

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

QW-JP025

Comchip Technology CO., LTD.

12 3 4

中文翻译

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