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CPDQR5V0USP-HF PDF预览

CPDQR5V0USP-HF

更新时间: 2024-11-06 12:54:27
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管
页数 文件大小 规格书
4页 334K
描述
Low Capacitance ESD Protection Diode

CPDQR5V0USP-HF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not RecommendedReach Compliance Code:compliant
风险等级:7.97Is Samacsys:N
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:30Base Number Matches:1

CPDQR5V0USP-HF 数据手册

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Low Capacitance ESD Protection Diode  
CPDQR5V0USP-HF  
RoHS Device  
Halogen Free  
0402/SOD-923F  
Features  
0.041(1.05)  
0.037(0.95)  
- Uni-directional ESD protection.  
- Surface mount package.  
- Low capacitance.  
0.026(0.65)  
0.022(0.55)  
- Low Leakage current.  
- High component density.  
0.022(0.55)  
0.018(0.45)  
Mechanical data  
0.012(0.30) Typ.  
- Case: 0402/SOD-923 standard package,  
molded plastic.  
- Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.020(0.50) Typ.  
- Marking Code: Cathode band & 5S  
- Mounting position: Any.  
Dimensions in inches and (millimeter)  
- Weight: 0.001 gram(approx.).  
Maximum Rating AND Electrical Characteristics  
O
(at TA=25 C unless otherwise noted)  
Typ  
Symbol Min  
Max Unit  
Parameter  
Reverse stand-off voltage  
Forward voltage  
Conditions  
VRWM  
5.0  
V
IF = 10mA  
IR = 1mA  
VR = 5V  
VF  
1.5  
V
Breakdown voltage  
VBR  
IR  
5.4  
V
Reverse leakage current  
Junction capacitance  
µA  
pF  
1.0  
0.9  
VR = 0V,f = 1MHz  
CJ  
0.6  
IEC 61000-4-2(air)  
15  
8
ESD capability  
ESD  
VC  
kV  
V
IEC 61000-4-2(contact)  
IPP = 1A,TP=8/20us  
IPP = 2.5A,TP=8/20us  
13  
20  
Clamping voltage  
Peak pulse power  
PPP  
TJ  
50  
W
°C  
°C  
Operation temperature  
Storage temperature  
150  
150  
TSTG  
-55  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-G7059  
Comchip Technology CO., LTD.  

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