Datasheet > CPDQT5V0-HF_15

CPDQT5V0-HF_15

更新时间： 2024-11-10 01:24:39

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
3页	556K
描述
Low Profile SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQT5V0-HF_15 数据手册

Low Profile SMD ESD Protection Diode

CPDQT5V0-HF

RoHS Device

Halogen Free

0402/SOD-882

Features

- IEC61000-4-2 Level 4 ESD protection.

0.041(1.05)

0.037(0.95)

- ESD Rating of Class 3 per Human Body Mode.

- Peak Power up to 150 Watts @ 8x20µs Pulse.

- Low Leakage current.

0.026(0.65)

0.022(0.55)

- Response Time is Typically <1ns

0.005(0.12)

- Working Voltage: 5V

0.015(0.37)MAX.

Mechanical data

0.012(0.30)

0.008(0.20)

- Case: 0402/SOD-882 small outline plastic package.

- Terminals: Matte tin plated, solderable per

0.008(0.2)

MIL-STD-750, method 2026.

- Mounting position: Any.

- High temperature soldering guaranteed: 260°C/10 second.

- Weight: 0.001 gram(approx.).

0.021(0.54)

0.017(0.44)

Dimensions in inches and (millimeter)

Circuit Diagram

Maximum Rating and Electrical Characteristics

( at TA=25 C unless otherwise noted, VF=0.9V Max. @ IF=10mA for all types)

Symbol

Typ

Max Unit

Parameter

Maximum working Peak Reverse Voltage

Maximum diode breakdown voltage

Conditions

Min

VRWM

5.0

IR = 1mA

VBR

5.6

VR = 3.5V

VR = 5V

0.3

0.5

Maximum reverse leakage current

Junction capacitance

ESD capability

µA

VR =0V,f =1MHz

ESD

IEC 61000-4-2(air)

IEC 61000-4-2(Contact)

IPP = 5 A, tp=8/20us

IPP = 9.4 A, tp=8/20us

11.6

Clamping Voltage

18.6

174

150

Peak Pulse Power

TP=8/20us

PPK

Maximum Junction temperature

Operation temperature range

Storage temperature range

NOTES:

-55

-40

-55

°C

TOP

125

155

°C

TSTG

1. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-JP037

Comchip Technology CO., LTD.

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中文翻译

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