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CPDQR12VEU-HF PDF预览

CPDQR12VEU-HF

更新时间: 2024-11-18 12:59:31
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 185K
描述
Trans Voltage Suppressor Diode,

CPDQR12VEU-HF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
Reach Compliance Code:compliant风险等级:5.76
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:30Base Number Matches:1

CPDQR12VEU-HF 数据手册

 浏览型号CPDQR12VEU-HF的Datasheet PDF文件第2页浏览型号CPDQR12VEU-HF的Datasheet PDF文件第3页浏览型号CPDQR12VEU-HF的Datasheet PDF文件第4页 
SMD ESD Protection Diode  
SMD Diodes Specialist  
(RoHS Device)  
CPDQR12V  
Features  
Bi-diretional ESD protection.  
(16kV) IEC 61000-4-2 rating.  
Surface mount package.  
0402(1005)  
Ultra small SMD package:0402.  
High component density.  
0.041(1.05)  
0.037(0.95)  
Mechanical data  
0.026(0.65)  
0.022(0.55)  
Case: 0402(1005) standard package,  
molded plastic.  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.022(0.55)  
0.018(0.45)  
Marking Code:  
CPDQR12V: E2  
0.012(0.30) Typ.  
Mounting position: Any.  
Weight: 0.001 gram(approx.).  
0.020(0.50) Typ.  
Dimensions in inches and (millimeter)  
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol Min  
Max Unit  
Parameter  
Diode breakdown voltage  
Conditions  
IR = 1mA  
VBD  
13  
V
17  
0.1  
12  
Leakage current  
VR = 12V  
IL  
2.0  
uA  
pF  
Junction capacitance  
VR = 0V,f =1MHz  
CT  
IEC 61000-4-2(air)  
IEC 61000-4-2(contact)  
16  
8
ESD capability  
ESD  
kV  
Clamping voltage  
IPP = 1A,TP=8/20us  
TP=8/20us  
VC  
PPP  
Tj  
25  
25  
V
Peak pulse power  
W
O
Operation temperature  
Storage temperature  
125  
150  
C
O
TSTG  
-55  
C
REV:A  
Page 1  
QW-A7024  
Comchip Technology CO., LTD.  

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