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CPDQR3V3R-HF PDF预览

CPDQR3V3R-HF

更新时间: 2024-11-18 12:54:27
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 95K
描述
SMD ESD Protection Diode

CPDQR3V3R-HF 数据手册

 浏览型号CPDQR3V3R-HF的Datasheet PDF文件第2页浏览型号CPDQR3V3R-HF的Datasheet PDF文件第3页浏览型号CPDQR3V3R-HF的Datasheet PDF文件第4页 
SMD ESD Protection Diode  
Comchip  
S M D D i o d e S p e c i a l i s t  
CPDQR3V3R-HF  
RoHS Device  
Halogen Free  
0402/SOD-923F  
Features  
0.041(1.05)  
0.037(0.95)  
- Bi-directional ESD protection.  
- Surface mount package.  
0.026(0.65)  
0.022(0.55)  
- Ultra small SMD package:0402.  
- High component density.  
Mechanical data  
0.022(0.55)  
0.018(0.45)  
- Case: 0402/SOD-923 standard package,  
0.012(0.30) Typ.  
molded plastic.  
- Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
- Marking Code: E3  
0.020(0.50) Typ.  
- Mounting position: Any.  
- Weight: 0.001 gram(approx.).  
Dimensions in inches and (millimeter)  
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol Min  
Max Unit  
Parameter  
Conditions  
Reverse stand-off voltage  
VRWM  
3.3  
V
Diode breakdown voltage  
Leakage current  
IR = 1mA  
VBD  
IR  
5.2  
V
VR = 3.3V  
1.0  
uA  
pF  
Junction capacitance  
VR = 0V,f =1MHz  
CT  
18  
IPP=1A , tp=8/20us  
IPP=2A , tp=8/20us  
15.5  
18  
Clamping voltage  
Peak pulse power  
ESD capability  
VC  
PPK  
ESD  
V
tp= 8/20  
36  
W
kV  
IEC 61000-4-2(air)  
IEC 61000-4-2(contact)  
15  
8
Operation temperature  
Storage temperature  
Tj  
150  
150  
°C  
°C  
TSTG  
-55  
REV: A  
Page 1  
QW-G7044  
Comchip Technology CO., LTD.  

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