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CPDQR5V0SP-HF PDF预览

CPDQR5V0SP-HF

更新时间: 2024-09-16 12:54:27
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管
页数 文件大小 规格书
4页 77K
描述
Low Capacitance ESD Protection Diode

CPDQR5V0SP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
Is Samacsys:N击穿电压标称值:8 V
最大钳位电压:14 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
极性:BIDIRECTIONAL最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
Base Number Matches:1

CPDQR5V0SP-HF 数据手册

 浏览型号CPDQR5V0SP-HF的Datasheet PDF文件第2页浏览型号CPDQR5V0SP-HF的Datasheet PDF文件第3页浏览型号CPDQR5V0SP-HF的Datasheet PDF文件第4页 
Low Capacitance ESD Protection Diode  
Comchip  
S M D D i o d e S p e c i a l i s t  
CPDQR5V0SP-HF  
RoHS Device  
Halogen Free  
Features  
- IEC61000-4-2 (ESD) ±8kV (Contact) , ±15kV(Air).  
0402/SOD-923F  
0.041(1.05)  
0.037(0.95)  
- IEC61000-4-4 (FET) rating. 40A( 5/50uS)  
- IEC61000-4-5 (Lightning) rating. 24A( 8/20uS)  
- Protects one bi-directional I/O line  
- Working Voltage: 5V  
0.026(0.65)  
0.022(0.55)  
- Typical capacitance: 0.3pF  
Mechanical data  
0.020(0.50)  
0.016(0.40)  
- Case: 0402/SOD-923F small outline plastic package.  
molded plastic.  
0.012(0.30)  
0.008(0.20)  
- Terminals: Matte tin plated, solderable per  
MIL-STD-202,method 208.  
- Mounting position: Any.  
- High temperature soldering guaranteed:  
260°C/10 second.  
- Weight: 0.001 gram(approx.).  
0.022(0.55)  
0.018(0.45)  
Dimensions in inches and (millimeter)  
Circuit diagram  
Maximum Rating (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
Peak pulse current ( tp = 8/20µs waveform)  
PPP  
120  
W
ESD per IEC 61000-4-2(Air)  
ESD per IEC 61000-4-2(Contact)  
±17  
±12  
VESD  
kV  
Junction temperature rang  
Storage temperature rang  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
VRWM  
IR  
Typ  
Parameter  
Conditions  
Min  
-
Max Unit  
-
Reverse stand-Off voltage  
5
V
uA  
V
-
-
-
-
-
-
Reverse leakage current  
VR = 5 V  
IR = 1 mA  
IPP= 1 A  
IPP= 2 A  
1
Reverse breakdown voltage  
V(BR)  
6
-
10  
12  
14  
0.5  
VC  
V
Clamping voltage  
-
-
VC  
CJ  
V
Junction capacitance  
pF  
VR= 0V , F=1MHz  
REV: A  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 1  
QW-JP025  
Comchip Technology CO., LTD.  

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