Datasheet > CPDQC5V0USP-HF

CPDQC5V0USP-HF

更新时间： 2024-11-22 01:24:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	116K
描述
SMD Low Capacitance ESD Protection Diode

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中文翻译

获取价格

数据手册
替代型号

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CPDQC5V0USP-HF 数据手册

SMD Low Capacitance ESD Protection Diode

CPDQC5V0USP-HF

RoHS Device

Halogen Free

Features

0402C/SOD-923F

- Uni-directional ESD protection.

- IEC61000-4-2 Level 4 ESD protection.

- Surface mount package.

- Low capacitance.

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

- Low Leakage current.

- High component density.

Mechanical data

0.022(0.55)

0.018(0.45)

- Case: 0402C/SOD-923F standard package,

molded plastic.

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

0.012(0.30)

0.008(0.20)

0.001(0.02)

Max.

- Marking Code: Cathode band & 5S

- Mounting position: Any.

0.022(0.55)

0.018(0.45)

- Weight: 0.001 gram(approx.).

Dimensions in inches and (millimeter)

Circuit diagram

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Value

Unit

Peak pulse power

TP = 8/20us

PPP

IPP

Peak pulse current

ESD capability

2.5

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

±15

±8

ESD

Operation temperature range

Storage temperature range

-55~+150

°C

TSTG

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Working peak reverse voltage

Forward voltage

Conditions

Min

Max Unit

VRWM

IF = 10mA

IT = 1mA

1.5

Diode breakdown voltage

Reverse current

VBR

5.4

VRWM = 5V

0.1

0.6

1.0

IPP = 1A, TP = 8/20us

IPP = 2.5A, TP = 8/20us

Clamping voltage

Junction capacitance

VR = 0V, f = 1MHz

0.9

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

Page 1

QW-G7063

Comchip Technology CO., LTD.

12 3 4

中文翻译

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CPDQC5V0USP-HF 替代型号

型号	品牌	替代类型	描述	数据表
ACPDQC5V0USP-HF	COMCHIP	完全替代	Low Capacitance ESD Protection Diode

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