Datasheet > CPDQC5V0CSP-HF

CPDQC5V0CSP-HF

更新时间： 2024-09-17 01:25:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	105K
描述
Low Capacitance ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQC5V0CSP-HF 数据手册

Low Capacitance ESD Protection Diode

CPDQC5V0CSP-HF

RoHS Device

Halogen Free

Features

- Bi-directional ESD protection.

- IEC61000-4-2 Level 4 ESD protection.

- Working Voltage: 5V

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

- Typical capacitance: 0.3pF

0.026(0.65)

0.022(0.55)

Mechanical data

- Case: 0402C/SOD-923F small outline plastic package.

molded plastic.

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

0.022(0.55)

0.018(0.45)

- Mounting position: Any.

0.012(0.30)

0.008(0.20)

0.001(0.02)

Max.

- High temperature soldering guaranteed:

260°C/10 second.

- Weight: 0.001 grams(approx.).

0.022(0.55)

0.018(0.45)

Circuit diagram

Dimensions in inches and (millimeter)

Maximum Rating ( at TA=25°C unless otherwise noted )

Symbol

Parameter

Value

Unit

Peak pulse power ( tp = 8/20µs waveform)

PPP

ESD per IEC 61000-4-2(Air)

ESD per IEC 61000-4-2(Contact)

±15

±8

VESD

Operating temperature rang

Storage temperature rang

-55 to +150

°C

TSTG

Electrical Characteristics ( at TA=25°C unless otherwise noted )

Symbol

VRWM

Typ

Parameter

Conditions

Min

Max

Unit

Reverse stand-off voltage

Reverse leakage current

VR = 5 V

100

Reverse breakdown voltage

V(BR)

IR = 1 mA

IPP= 1 A

Clamping voltage

IPP= 3A

Junction capacitance

VR= 0V , F=1MHz

0.3

0.6

REV:A

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

QW-G7076

Comchip Technology CO., LTD.

12 3 4

中文翻译

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