Datasheet > CPDQ3V3U-HF

CPDQ3V3U-HF

更新时间： 2024-09-16 12:24:23

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
6页	110K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQ3V3U-HF 数据手册

SMD ESD Protection Diode

CPDQ3V3U-HF

RoHS Device

Halogen Free

0402/SOD-923F

Features

- IEC61000-4-2 Level 4 ESD protection.

- ESD Rating of Class 3(>16kV) per Human Body Mode.

- Low body height: 0.017”(0.43mm)

- Low Leakage

0.041(1.05)

0.037(0.95)

0.033(0.85)

0.030(0.75)

Mechanical data

0.010(0.25)

0.006(0.15)

0.026(0.65)

- Epoxy: Meets UL 94V-0

0.022(0.55)

- Case: 0402/SOD-923F small outline plastic package.

molded plastic.

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

0.007(0.17)

0.003(0.07)

0.006(0.15)

0.002(0.05)

0.016(0.40)

0.013(0.34)

- Mounting position: Any.

- High temperature soldering guaranteed: 260°C/10 second.

- Weight: 0.001mgram(approx.).

Dimensions in inches and (millimeter)

Circuit Diagram

Maximum Rating and Electrical Characteristics

(at TA=25 C unless otherwise specified. VF=0.9V at IF=10mA for all types)

Symbol

Typ

Max Unit

Parameter

Maximum working Peak Reverse Voltage

Maximum diode breakdown voltage

Maximum reverse leakage current

Junction capacitance

Conditions

Min

VRWM

VBR

3.3

IR = 1mA

5.0

µA

VR = 3.3V

2.5

VR =0V,f =1MHz

ESD

IEC 61000-4-2(air)

ESD capability

IEC 61000-4-2(Contact)

Clamping Voltage

IPP = 9.8A, tp=8/20us

TP=8/20us

10.4

Peak Pulse Power

PPP

102

°C

Junction temperature

Storage temperature

-55

150

TSTG

NOTES:

1. FR-5=1.0*0.75*0.62in.

2. Surge current waveform per Figure3.

3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

REV:

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

QW-JPXXX

Comchip Technology CO., LTD.

12 3 4 5 6

中文翻译

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