Datasheet > CPDQ5V0U1-HF

CPDQ5V0U1-HF

更新时间： 2024-11-06 12:54:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
5页	350K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQ5V0U1-HF 数据手册

SMD ESD Protection Diode

CPDQ5V0U1-HF

RoHS Device

Features

- IEC61000-4-2 Level 4 ESD Protection.

0402/SOD-923F

- ESD Rating of Class 3 (>16kV) per Human Body Mode.

0.041(1.05)

0.037(0.95)

- Low bodym height: 0.017” (0.43mm) Max

- Low Leakage.

0.033(0.85)

0.030(0.75)

Mechanical data

0.010(0.25)

0.006(0.15)

0.026(0.65)

- Case: 0402/SOD-923F small outline plastic package.

0.022(0.55)

molded plastic.

- Terminals: Matte tin plated, solderable per

MIL-STD-750,method 2026.

0.007(0.17)

0.003(0.07)

0.006(0.15)

0.002(0.05)

- Mounting position: Any.

0.016(0.40)

0.014(0.36)

- High temperature soldering guaranteed: 260°C/10 second.

- Weight: 0.001 gram(approx.).

Dimensions in inches and (millimeter)

Circuit Diagram

Maximum Rating and Electrical Characteristics

(at TA=25 C unless otherwise specified, VF=0.9V Max. @ IF=10mA for all types )

Symbol

Typ

Max Unit

Parameter

Working Peak Reverse Voltage

Breakdown voltage

Conditions

Min

VRWM

VBR

5.0

IR = 1mA

6.2

Maximum reverse leakage current

Junction capacitance

µA

VR = 5V

1.0

VR =0V,f =1MHz

ESD

IEC 61000-4-2(air)

ESD capability

IEC 61000-4-2(Contact)

Clamping Voltage

IPP = 8.7 A, tp=8/20us

TP=8/20us

12.3

Peak Pulse Power

Junction temperature range

Storage temperature range

NOTES:

107

°C

-55

150

TSTG

1. FR-5= 1.0*0.75*0.62 in.

2. Surge current waveform per Figure 3.

3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

REV:B

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

QW-JP029

Comchip Technology CO., LTD.

12 3 4 5

中文翻译

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