Datasheet > CPDQC3V3C-HFT

CPDQC3V3C-HFT

更新时间： 2024-11-19 01:22:23

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
5页	121K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQC3V3C-HFT 数据手册

SMD ESD Protection Diode

CPDQC3V3C-HF

RoHS Device

Halogen Free

Features

- Bi-directional ESD protection.

- IEC 61000-4-2 (ESD) ; ±25 KV (Contact)

- ESD rating of Class 3B per Human Body Mode.

- Surface mount package.

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

- Ultra small SMD package:0402.

- High component density.

Mechanical data

0.022(0.55)

0.018(0.45)

- Case: 0402C/SOD-923F standard package,

molded plastic.

0.012(0.30)

0.008(0.20)

0.001(0.02)

Max.

- Terminals: Matte tin plated, Solderable per

MIL-STD-750, method 2026.

- Marking Code: E3

- Mounting position: Any.

- Weight: 0.001 grams(approx.).

0.022(0.55)

0.018(0.45)

Circuit diagram

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25°C unless otherwise noted)

Conditions

Symbol

PPP

Parameter

Value

Unit

Peak pulse power

TP = 8/20us

Peak pulse current

ESD capability

TP = 8/20us

IPP

IEC 61000-4-2(Air)

IEC 61000-4-2(Contact)

VESD

±25

Operating temperature range

Storage temperature range

-55 to +125

°C

TSTG

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

VRWM

VBR

Typ

Parameter

Conditions

Min

Max

3.3

Unit

Working peak reverse voltage

Diode breakdown voltage

Punch-through voltage

Snap-back voltage

IT = 1mA

3.6

3.5

2.8

IPT = 2uA

VPT

ISB = 50mA

VSB

Reverse leakage current

VRWM = 3.3V

0.05

0.5

IPP = 1 A, Tp = 8/20us

IPP = 5 A, Tp = 8/20us

VR = 0 V, f = 1MHz

Clamping voltage

Junction capacitance

Company reserves the right to improve product design , functions and reliability without notice.

REV:C

Page 1

QW-G7086

Comchip Technology CO., LTD.

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中文翻译

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