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CPDQC3V3C-HFT PDF预览

CPDQC3V3C-HFT

更新时间: 2024-11-07 01:22:23
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上华 - COMCHIP /
页数 文件大小 规格书
5页 121K
描述
SMD ESD Protection Diode

CPDQC3V3C-HFT 数据手册

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SMD ESD Protection Diode  
CPDQC3V3C-HF  
RoHS Device  
Halogen Free  
Features  
- Bi-directional ESD protection.  
- IEC 61000-4-2 (ESD) ; ±25 KV (Contact)  
- ESD rating of Class 3B per Human Body Mode.  
- Surface mount package.  
0402C/SOD-923F  
0.041(1.05)  
0.037(0.95)  
0.026(0.65)  
0.022(0.55)  
- Ultra small SMD package:0402.  
- High component density.  
Mechanical data  
0.022(0.55)  
0.018(0.45)  
- Case: 0402C/SOD-923F standard package,  
molded plastic.  
0.012(0.30)  
0.008(0.20)  
0.001(0.02)  
Max.  
- Terminals: Matte tin plated, Solderable per  
MIL-STD-750, method 2026.  
- Marking Code: E3  
- Mounting position: Any.  
- Weight: 0.001 grams(approx.).  
0.022(0.55)  
0.018(0.45)  
Circuit diagram  
Dimensions in inches and (millimeter)  
Maximum Rating (at TA=25°C unless otherwise noted)  
Conditions  
Symbol  
PPP  
Parameter  
Value  
Unit  
Peak pulse power  
TP = 8/20us  
65  
W
Peak pulse current  
ESD capability  
TP = 8/20us  
IPP  
5
A
IEC 61000-4-2(Air)  
IEC 61000-4-2(Contact)  
VESD  
±25  
kV  
Operating temperature range  
Storage temperature range  
TJ  
-55 to +125  
-55 to +125  
°C  
°C  
TSTG  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
VRWM  
VBR  
Typ  
Parameter  
Conditions  
Min  
Max  
3.3  
Unit  
V
Working peak reverse voltage  
Diode breakdown voltage  
Punch-through voltage  
Snap-back voltage  
IT = 1mA  
3.6  
3.5  
2.8  
V
IPT = 2uA  
VPT  
V
ISB = 50mA  
VSB  
V
Reverse leakage current  
VRWM = 3.3V  
IR  
0.05  
6
0.5  
8
uA  
V
IPP = 1 A, Tp = 8/20us  
IPP = 5 A, Tp = 8/20us  
VR = 0 V, f = 1MHz  
VC  
Clamping voltage  
VC  
13  
6
V
Junction capacitance  
pF  
CJ  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:C  
Page 1  
QW-G7086  
Comchip Technology CO., LTD.  

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