Datasheet > CPDQC3V3T-HF

CPDQC3V3T-HF

更新时间： 2024-11-07 01:25:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	357K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQC3V3T-HF 数据手册

SMD ESD Protection Diode

CPDQC3V3T-HF

RoHS Device

Halogen Free

0402C/SOD-923F

Features

0.041(1.05)

0.037(0.95)

- Bi-directional ESD protection.

- IEC 61000-4-2 ±30kV(Contact).

- ESD Rating of Class 3 per Human Body Model.

- ESD Rating of Class 4 per Machine Model.

- Surface mount package.

0.026(0.65)

0.022(0.55)

- Ultra small SMD package:0402

- High component density.

0.022(0.55)

0.018(0.45)

0.012(0.30)

0.008(0.20)

0.001(0.02)

Max.

Mechanical data

- Case: 0402C/SOD-923F Standard package,

molded plastic.

0.022(0.55)

0.018(0.45)

- Terminals: Matte tin plated, solderable per

MIL-STD-750,method 2026.

Dimensions in inches and (millimeter)

- Mounting position: Any.

- Weight: 0.001 grams(approx.).

Circuit diagram

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Value

Unit

Peak pulse power

TP = 8/20us

PPP

IPP

170

Peak pulse current

IEC 61000-4-2(air)

ESD

±30

ESD capability

IEC 61000-4-2(contact)

±30

Operation temperature range

Storage temperature range

-40~+125

-55~+150

°C

TSTG

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Working peak reverse voltage

Breakdown voltage

VRWM

VBR

3.3

4.6

0.5

IT = 1mA

3.6

4.2

<0.02

4.65

9.8

Reverse leakage current

VRWM = 3.3V

IPP = 1A, TP = 8/20us

IPP = 16A, TP = 8/20us

IPP = 5A, TP = 100ns

IPP = 18A, TP = 100ns

Clamping voltage

VCL

8.75

0.18

Dynamic resistance

Junction capacitance

RDYN

VR = 0V, f = 1MHz

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

Page 1

QW-G7068

Comchip Technology CO., LTD.

12 3 4

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