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CPDQ5V0U1-HF_15 PDF预览

CPDQ5V0U1-HF_15

更新时间: 2024-11-19 01:24:39
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描述
SMD ESD Protection Diode

CPDQ5V0U1-HF_15 数据手册

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SMD ESD Protection Diode  
CPDQ5V0U1-HF  
RoHS Device  
Features  
- IEC61000-4-2 Level 4 ESD Protection.  
0402/SOD-923F  
- ESD Rating of Class 3 (>16kV) per Human Body Mode.  
0.041(1.05)  
0.037(0.95)  
- Low bodym height: 0.017” (0.43mm) Max  
- Low Leakage.  
0.033(0.85)  
0.030(0.75)  
Mechanical data  
0.010(0.25)  
0.006(0.15)  
0.026(0.65)  
- Case: 0402/SOD-923F small outline plastic package.  
0.022(0.55)  
molded plastic.  
- Terminals: Matte tin plated, solderable per  
MIL-STD-750,method 2026.  
0.007(0.17)  
0.003(0.07)  
0.006(0.15)  
0.002(0.05)  
- Mounting position: Any.  
0.016(0.40)  
0.014(0.36)  
- High temperature soldering guaranteed: 260°C/10 second.  
- Weight: 0.001 gram(approx.).  
Dimensions in inches and (millimeter)  
Circuit Diagram  
Maximum Rating and Electrical Characteristics  
O
(at TA=25 C unless otherwise specified, VF=0.9V Max. @ IF=10mA for all types )  
Symbol  
Typ  
Max Unit  
Parameter  
Working Peak Reverse Voltage  
Breakdown voltage  
Conditions  
Min  
VRWM  
VBR  
IR  
5.0  
V
IR = 1mA  
6.2  
V
Maximum reverse leakage current  
Junction capacitance  
µA  
pF  
VR = 5V  
1.0  
VR =0V,f =1MHz  
CT  
ESD  
ESD  
Vc  
65  
kV  
kV  
V
IEC 61000-4-2(air)  
15  
8
ESD capability  
IEC 61000-4-2(Contact)  
Clamping Voltage  
IPP = 8.7 A, tp=8/20us  
TP=8/20us  
12.3  
Peak Pulse Power  
Junction temperature range  
Storage temperature range  
NOTES:  
PD  
107  
W
°C  
°C  
-55  
-55  
150  
150  
Tj  
TSTG  
1. FR-5= 1.0*0.75*0.62 in.  
2. Surge current waveform per Figure 3.  
.
3. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.  
REV:B  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 1  
QW-JP029  
Comchip Technology CO., LTD.  

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