Datasheet > CPDQC12VE-HF

CPDQC12VE-HF

更新时间： 2024-11-10 01:24:55

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	105K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDQC12VE-HF 数据手册

SMD ESD Protection Diode

CPDQC12VE-HF

RoHS Device

Halogen Free

Features

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

- Bi-directional ESD protection.

- Surface mount package.

- Ultra small SMD package:0402.

- High component density.

0.026(0.65)

0.022(0.55)

Mechanical data

- Case: 0402C/SOD-923F standard package,

0.022(0.55)

0.018(0.45)

molded plastic.

0.012(0.30)

0.008(0.20)

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

0.001(0.02)

Max.

- Mounting position: Any.

- Weight: 0.001 grams(approx.).

0.022(0.55)

0.018(0.45)

Circuit Diagram

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Value

115

Unit

Peak pulse power

TP = 8/20us

PPP

IPP

Peak pulse current

ESD capability

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD

±30

Operation temperature range

Storage temperature range

-55~+125

-55~+150

°C

TSTG

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Working peak reverse voltage

Breakdown voltage

Conditions

Min

Max Unit

VRWM

VBR

IT = 1mA

15.1

16.3

100

Reverse leakage current

VRWM = 12V

IPP = 1A, TP = 8/20us

IPP = 5A, TP = 8/20us

Clamping voltage

Junction capacitance

VR = 0V, f = 1MHz

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-G7088

Comchip Technology CO., LTD.

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中文翻译

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