Datasheet > CPDQ3V3-HF

CPDQ3V3-HF

更新时间： 2024-11-18 12:51:23

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
6页	113K
描述
IEC61000-4-2 Level 4 ESD protection.

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中文翻译

获取价格

数据手册

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CPDQ3V3-HF 数据手册

SMD ESD Protection Diode

CPDQ3V3-HF

RoHS Device

Halogen Free

Features

- IEC61000-4-2 Level 4 ESD protection.

0402/SOD-923F

- ESD Rating of Class 3 per Human Body Mode.

0.041(1.05)

0.037(0.95)

- Peak Power up to 150 Watts @ 8x20µs Pulse.

- Low Leakage current.

0.033(0.85)

0.030(0.75)

- Response Time is Typically <1ns

- Working Voltage: 3.3V

0.010(0.25)

0.006(0.15)

0.026(0.65)

0.022(0.55)

Mechanical data

- Case: 0402/SOD-923F small outline plastic package.

0.007(0.17)

0.003(0.07)

0.006(0.15)

0.002(0.05)

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

0.016(0.40)

0.013(0.34)

- Mounting position: Any.

- High temperature soldering guaranteed: 260°C/10 second.

- Weight: 0.001 gram(approx.).

Dimensions in inches and (millimeter)

Circuit Diagram

Maximum Rating and Electrical Characteristics

(at TA=25 C unless otherwise specified )

Symbol

Typ

Max Unit

Parameter

Maximum working Peak Reverse Voltage

Maximum diode breakdown voltage

Maximum reverse leakage current

Junction capacitance

Conditions

Min

VRWM

VBR

3.3

IR = 1mA

5.0

µA

VR = 3.3V

VR =0V,f =1MHz

ESD

IEC 61000-4-2(air)

ESD capability

IEC 61000-4-2(Contact)

IPP = 5 A, tp=8/20us

IPP = 11.2 A, tp=8/20us

8.4

14.1

Clamping Voltage

Peak Pulse Power

TP=8/20us

PPP

158

150

125

155

°C

Junction temperature

Operation temperature

Storage temperature

TOP

-40

-55

TSTG

NOTES:

1. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

REV:

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

QW-JPXXX

Comchip Technology CO., LTD.

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