Datasheet > CMPA0060025D

CMPA0060025D

更新时间： 2024-01-27 02:38:25

品牌	Logo	应用领域
科锐 - CREE		高功率电源射频微波
页数	文件大小	规格书
7页	614K
描述
25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

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技术参数
数据手册

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CMPA0060025D 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.71	构造：	COMPONENT
增益：	18 dB	最大输入功率 (CW)：	36 dBm
最大工作频率：	6000 MHz	最小工作频率：	20 MHz
射频/微波设备类型：	WIDE BAND HIGH POWER	最大电压驻波比：	5
Base Number Matches：	1

CMPA0060025D 数据手册

CMPA0060025D

25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA0060025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC enables very wide bandwidths.

Typical Performance Over 1.0-6.0 GHz (T_C= 25˚C)

Parameter

1.0 GHz

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

Units

Gain

18.0

18.5

18.0

17.0

Output Power @ P_IN32 dBm

Associated Gain @ P_IN32 dBm

PAE @ P_IN32 dBm

13.3

13.9

14.2

12.6

13.1

12.9

Note: V_DD= 50 V, I_D= 500 mA

Features

Applications

•ꢀ 18 dB Small Signal Gain

•ꢀ 30 W Typical P_SAT

•ꢀ UltraꢀBroadbandꢀAmpliﬁers

•ꢀ Test Instrumentation

•ꢀ EMCꢀAmpliﬁerꢀDrivers

•ꢀ Operation up to 50 V

•ꢀ High Breakdown Voltage

•ꢀ High Temperature Operation

•ꢀ Size 0.157 x 0.094 x 0.004 inches

Subject to change without notice.

www.cree.com/RF

12 3 4 5 6 7

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