Datasheet > CMPA0527005

CMPA0527005

更新时间： 2024-03-03 10:10:52

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
12页	864K
描述
5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers

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CMPA0527005 数据手册

CMPA0527005F

5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

Description

CMPA0527005F is a packaged gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). This device is matched to 50 ohms at the input and

unmatched at the output. This device operates from a 50 V rail

and is intended to be used as a predriver from 0.5 to 2.7 GHz. The

transistor is available in a 6 leaded flange package.

Package Types: 440221

PN: CMPA0527005F

Typical Performance Over 0.5 - 2.7 GHz (T_C= 25ºC), 50 V, P_IN= 24 dBm, CW

Parameter

0.5 GHz

20.4

1.0 GHz

20.8

1.5 GHz

2.0 GHz

20.5

2.7 GHz

Units

Small Signal Gain

Output Power

Drain Eﬀiciency

19.5

6.6

7.8

9.3

9.1

8.7

58.5

53.8

49.2

47.1

41.5

Note: Measured in the CMPA0527005F-AMP1 application circuit

Features

•

Up to 2.7 GHz Operation

8 W Typical Output Power

20 dB Small Signal Gain

Application Circuit for 0.5 - 2.7 GHz

50% Eﬀiciency

50 V Operation

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.0, 2022-8-26

For further information and support please visit:

https://www.macom.com/support

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