Datasheet > CMPA0060025F1

CMPA0060025F1

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	1851K
描述
RF/Microwave Amplifier,

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中文翻译

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技术参数
数据手册

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CMPA0060025F1 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

CMPA0060025F1 数据手册

CMPA0060025F1

25 W, DC - 6.0 GHz, GaN MMIC Power Ampliﬁer

Cree’s CMPA0060025F1 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC enables extremely

wide bandwidths to be achieved in a small footprint screw-down package.

Typical Performance Over 20 MHz - 6.0 GHz (T_C= 25˚C)

Parameter

20 MHz

0.5 GHz

1.0 GHz

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

Units

Gain

21.4

20.1

19.3

16.7

16.6

16.8

15.7

15.5

Output Power @ P_IN= 32 dBm

Power Gain @ P_IN= 32 dBm

Efﬁciency @ P_IN= 32 dBm

26.9

12.3

30.2

12.8

26.3

12.2

23.4

11.7

24.5

11.9

24.0

11.8

20.9

11.3

18.6

10.7

Note¹: V_DD= 50 V, I_DQ= 500 mA

Features

Applications

•

17 dB Small Signal Gain

•

Ultra Broadband Ampliﬁers

Test Instrumentation

25 W Typical P_SAT

Operation up to 50 V

EMC Ampliﬁer Drivers

High Breakdown Voltage

•

High Temperature Operation

0.5” x 0.5” total product size

Subject to change without notice.

www.cree.com/wireless

12 3 4 5 6 7...11

中文翻译

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