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CMPA0060002D PDF预览

CMPA0060002D

更新时间: 2024-01-12 23:51:48
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
7页 361K
描述
Wide Band High Power Amplifier, 20MHz Min, 6000MHz Max, DIE-4

CMPA0060002D 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

CMPA0060002D 数据手册

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CMPA0060002D  
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier  
Cree’s CMPA0060002D is a gallium nitride (GaN) High Electro
MobilityTransistor(HEMT)basedmonolithicmicrowaveintegrate
circuit (MMIC). GaN has superior properties compared to silico
or gallium arsenide, including higher breakdown voltage
higher saturated electron drift velocity and higher therma
conductivity. GaN HEMTs also offer greater power density and  
wider bandwidths compared to Si and GaAs transistors. This  
MMIC employs a distributed (traveling-wave) amplifier design  
approach, enabling extremely wide bandwidths to be achieved  
in a small footprint.  
Typical Performance Over 0.5-6.0 GHz (TC = 25˚C)  
Parameter  
0.5 GHz  
1.0 GHz  
2.5 GHz  
4.0 GHz  
6.0 GHz  
Units  
Gain  
18.7  
17.4  
17.6  
17.4  
17.6  
dB  
Saturated Output Power @ PIN 23 dBm  
Power Gain @ PIN 23 dBm  
7.0  
15.4  
43  
6.3  
15.0  
40  
5.7  
14.5  
36  
4.3  
13.3  
28  
3.6  
12.5  
31  
W
dB  
%
PAE @ PIN 23 dBm  
Note: VDD = 28 V, ID = 100 mA  
Features  
Applications  
17 dB Small Signal Gain  
2 W Typical PSAT  
Ultra Broadband Amplifiers  
Fiber Drivers  
Operation up to 28 V  
High Breakdown Voltage  
Test Instrumentation  
EMC Amplifier Drivers  
High Temperature Operation  
Size 0.169 x 0.066 x 0.004 inches  
Subject to change without notice.  
www.cree.com/wireless  
1

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