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CMPA0060002F

更新时间: 2024-02-25 08:45:01
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
9页 961K
描述
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

CMPA0060002F 数据手册

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CMPA0060002F  
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier  
Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobili
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenide, includin
higher breakdown voltage, higher saturated electron drift velocity and highe
thermal conductivity. GaN HEMTs also offer greater power density and wide
bandwidths compared to Si and GaAs transistors. This MMIC employs a  
distributed (traveling-wave) amplifier design approach, enabling extremely  
wide bandwidths to be achieved in a small footprint screw-down package  
featuring a copper-tungsten heat sink.  
Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C)  
Parameter  
20 MHz  
0.5 GHz  
1.0 GHz  
2.0 GHz  
3.0 GHz  
4.0 GHz  
5.0 GHz  
6.0 GHz  
Units  
Gain  
19.9  
18.8  
17.8  
16.8  
16.8  
17.5  
18.5  
16.5  
dB  
1
Saturated Output Power, PSAT  
4.3  
14.7  
34  
4.1  
13.1  
28  
4.5  
12.6  
29  
4.2  
12.2  
28  
3.7  
12.6  
24  
3.9  
10.9  
26  
4.8  
12.2  
33  
3.7  
9.5  
20  
W
dB  
%
1
Power Gain @ PSAT  
1
PAE @ PSAT  
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.  
Note2: VDD = 28 V, IDQ = 100 mA  
Features  
Applications  
17 dB Small Signal Gain  
Ultra Broadband Amplifiers  
3 W Typical PSAT  
Fiber Drivers  
Operation up to 28 V  
High Breakdown Voltage  
Test Instrumentation  
EMC Amplifier Drivers  
High Temperature Operation  
0.5” x 0.5” total product size  
Subject to change without notice.  
www.cree.com/rf  
1

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