Datasheet > CMPA0060025

CMPA0060025

更新时间： 2024-03-03 10:08:42

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
8页	545K
描述
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier

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CMPA0060025 数据手册

CMPA0060025D

25 W, 20 MHz - 6.0 GHz, GaN MMIC,

Power Ampliﬁer

Description

The CMPA0060025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drif velocity and higher thermal conductivity. GaN HEMTs also

oﬀer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC enables very wide bandwidths.

PN: CMPA0060025D

Typical Performance Over 1.0-6.0 GHz (T_C= 25ºC)

Parameter

1.0 GHz

18.0

2.0 GHz

18.0

3.0 GHz

18.5

4.0 GHz

18.0

5.0 GHz

17.0

6.0 GHz

17.0

Units

Gain

Output Power @ P_IN32 dBm

Associated Gain @ P_IN32 dBm

PAE @ P_IN32 dBm

13.3

13.9

14.2

12.6

13.1

12.9

Note: V_DD= 50 V, I_D= 500 mA

Features

Applications

•

18 dB Small Signal Gain

30 W Typical P_SAT

•

Ultra Broadband Ampliꢀiers

Test Instrumentation

EMC Ampliꢀier Drivers

Operation up to 50 V

High Breakdown Voltage

High Temperature Operation

Size 0.157 x 0.094 x 0.004 inches

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.3, 2022-12-13

For further information and support please visit:

https://www.macom.com/support

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