Datasheet > CMPA0060002F1

CMPA0060002F1

更新时间： 2024-02-02 08:29:25

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	713K
描述
RF/Microwave Amplifier,

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中文翻译

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技术参数
数据手册

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CMPA0060002F1 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.68	Base Number Matches：	1

CMPA0060002F1 数据手册

CMPA0060002F1

2 W, DC - 6.0 GHz, GaN MMIC Power Ampliﬁer

Cree’s CMPA0060002F1 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC employs a

distributed (traveling-wave) ampliﬁer design approach, enabling extremely

wide bandwidths to be achieved in a small footprint screw-down package

featuring a copper-tungsten heat sink.

Typical Performance Over 20 MHz - 6.0 GHz (T_C= 25˚C)

Parameter

20 MHz

0.5 GHz

1.0 GHz

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

Units

Small Signal Gain

21.4

19.3

18.2

16.7

17.1

18.0

19.2

16.8

Saturated Output Power, P_SAT

5.9

12.5

5.5

11.1

5.7

10.6

4.8

8.8

4.5

10.1

4.6

9.1

4.6

8.2

3.3

7.8

Power Gain @ P_SAT

PAE @ P_SAT

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.

Note²: V_DD= 28 V, I_DQ= 100 mA

Features

Applications

•

18 dB Small Signal Gain

•

Ultra Broadband Ampliﬁers

4.8 W Typical P_SAT

Fiber Drivers

Operation up to 28 V

High Breakdown Voltage

Test Instrumentation

EMC Ampliﬁer Drivers

•

High Temperature Operation

0.5” x 0.5” total product size

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...9

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与CMPA0060002F1相关器件

型号	品牌	获取价格	描述	数据表
CMPA0060002F-AMP	CREE	获取价格	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
CMPA0060002F-TB	CREE	获取价格	2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
CMPA0060025	MACOM	获取价格	25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
CMPA0060025D	CREE	获取价格	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
CMPA0060025F	CREE	获取价格	25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
CMPA0060025F1	CREE	获取价格	RF/Microwave Amplifier,
CMPA0060025F-AMP	CREE	获取价格	25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
CMPA0060025F-TB	CREE	获取价格	25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
CMPA0527005	MACOM	获取价格	5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers
CMPA0527005F	CREE	获取价格	5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT