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CMLT5088ETRLEADFREE PDF预览

CMLT5088ETRLEADFREE

更新时间: 2024-09-14 20:57:47
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CENTRAL /
页数 文件大小 规格书
2页 454K
描述
Transistor

CMLT5088ETRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):300最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMLT5088ETRLEADFREE 数据手册

 浏览型号CMLT5088ETRLEADFREE的Datasheet PDF文件第2页 
CMLT5078E NPN/PNP  
CMLT5087E PNP/PNP  
CMLT5088E NPN/NPN  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT SILICON  
DUAL TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT5078E,  
CMLT5087E, and CMLT5088E are surface mount  
silicon transistors with enhanced specifications  
designed for applications requiring high gain and low  
noise.  
MARKING CODES: CMLT5078E: L78  
CMLT5087E: L87  
CMLT5088E: L88 or 88  
SOT-563 CASE  
o
MAXIMUM RATINGS: (T =25 C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
50  
50  
CBO  
CEO  
EBO  
V
V
5.0  
Continuous Collector Current  
Power Dissipation  
I
100  
mA  
mW  
C
P
350  
D
o
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
C
J
stg  
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25 C unless otherwise noted)  
A
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
NPN PNP  
MAX  
50  
UNITS  
nA  
I
V
=20V  
CBO  
CB  
I
V
=3.0V  
50  
nA  
V
EBO  
EB  
♦♦  
BV  
BV  
BV  
I =100μA  
50  
50  
135  
65  
150  
105  
7.5  
50  
CBO  
CEO  
C
I =1.0mA  
V
C
I =100μA  
5.0  
8.7  
45  
V
EBO  
E
V
V
V
I =10mA, I =1.0mA  
100  
400  
800  
900  
mV  
mV  
mV  
CE(SAT)  
CE(SAT)  
BE(SAT)  
FE  
C
B
I =100mA, I =10mA  
110  
700  
430  
435  
430  
125  
225  
700  
390  
380  
350  
75  
C
B
I =10mA, I =1.0mA  
C
B
h
V
=5.0V, I =0.1mA  
300  
300  
300  
50  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
C
h
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
FE  
C
♦♦  
h
h
=5.0V, I =10mA  
C
FE  
FE  
=5.0V, I =100mA  
C
f
=5.0V, I =500μA, f=20MHz  
100  
MHz  
pF  
T
C
C
=5.0V, I =0, f=1.0MHz  
E
4.0  
15  
ob  
ib  
C
=0.5V, I =0, f=1.0MHz  
pF  
C
h
=5.0V, I =1.0mA, f=1.0kHz  
350  
1400  
fe  
C
NF  
=5.0V, I =100μA, R =10kΩ,  
C S  
f=10Hz to 15.7kHz  
3.0  
dB  
Enhanced specification  
♦♦ Additional Enhanced specification  
R4 (22-March 2013)  

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