CMLT5554LEADFREE

更新时间： 2024-11-01 13:06:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管高压
页数	文件大小	规格书
2页	92K
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CMLT5554LEADFREE 数据手册

CMLT5554

Central

SURFACE MOUNT

Semiconductor Corp.

PICOmini

DUAL,COMPLEMENTARY

HIGH VOLTAGE

DESCRIPTION:

The Central Semiconductor CMLT5554

consists of one 2N5551 NPN silicon transistor

and one individual isolated complementary

2N5401 PNP silicon transistor, manufactured

by the epitaxial planar process and epoxy

molded in an SOT-563 surface mount package.

This PICOmini™ device has been designed for

high voltage amplifier applications.

SILICON TRANSISTORS

MARKING CODE: 5C4

SOT-563 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

NPN (Q1)

180

PNP (Q2)

160

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

160

150

6.0

5.0

600

350

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

NPN (Q1)

PNP (Q2)

SYMBOL

TEST CONDITIONS

MIN MAX

UNITS

µA

=120V

=100V

0.2

0.5

1.0

240

CBO

CEO

EBO

CE(SAT)

BE(SAT)

=120V, T =100°C

=100V, T =150°C

I =100µA

180

160

6.0

160

150

5.0

I =1.0mA

I =10µA

I =10mA, I =1.0mA

0.15

0.2

1.0

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

100

=5.0V, I =10mA

250

300

6.0

200

8.0

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100 300

MHz

=10V, I =0, f=1.0MHz

6.0

200

8.0

=10V, I =1.0mA, f=1.0kHz

=5.0V, I =200µA, R =10Ω,

f=10Hz to 15.7kHz

R0 (26-October 2004)

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