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CMLT591ETR PDF预览

CMLT591ETR

更新时间: 2024-11-01 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 92K
描述
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, PICOMINI-6

CMLT591ETR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

CMLT591ETR 数据手册

 浏览型号CMLT591ETR的Datasheet PDF文件第2页 
TM  
Central  
CMLT591E  
Semiconductor Corp.  
SURFACE MOUNT  
TM  
PICOmini  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLT591E  
type is a PNP Low V  
1.0 Amp transistor,  
CE(Sat)  
epoxy molded in a space saving PICOmini™  
SOT-563 surface mount package and designed  
for applications requiring a high current capability  
and low saturation voltages.  
C
C
E
C
C
B
MARKING CODE: L59  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Base Current  
Collector Current (Peak)  
Power Dissipation  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
V
V
V
80  
60  
V
V
V
A
mA  
A
CBO  
CEO  
EBO  
5.0  
1.0  
200  
2.0  
250  
I
C
I
B
I
CM  
P
mW  
D
T ,T  
stg  
-65 to +150  
500  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=60V  
=4.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
EBO  
CBO  
CEO  
CB  
EB  
BV  
BV  
BV  
V
V
V
V
h
h
h
h
I =100µA  
80  
60  
5.0  
C
I =10mA  
C
I =100µA  
EBO  
E
I =500mA, I =50mA  
0.20  
0.40  
1.1  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
FE  
FE  
FE  
T
C
B
I =1.0A, I =100mA  
C
B
B
I =1.0A, I =100mA  
C
V
=5.0V, I =1.0A  
1.0  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
V
V
=5.0V, I =1.0mA  
200  
200  
50  
15  
150  
C
=5.0V, I =500mA  
600  
10  
C
=5.0V, I =1.0A  
C
=5.0V, I =2.0A  
C
f
C
=10V, I =50mA, f=100MHz  
MHz  
pF  
C
=10V, I =0, f=1.0MHz  
E
ob  
R2 (7-August 2003)  

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